The article discusses standard models of titanium dioxide-based memristors. A memristor is similar to a memory resistor and demonstrates a nonlinear resistance characteristic in which the charge parameter is a state variable. They can be used to create new types of electronic devices with high energy efficiency and performance, as well as to create machines that can learn and adapt to changing environmental conditions and in many practical applications: data storage memory (binary and multilevel), switches in logical electronic circuits, plastic components in neuromorphic artificial systems intelligence based on nanoelectronic components. It has been shown that when voltage is applied to charged ions, they begin to drift, and the boundary between the two regions shifts. When a sinusoidal alternating voltage of a given frequency is applied to the memristor, the shape of the volt-ampere characteristic (VAC) resembles a Lissajous diagram centered at the origin.

Keywords: memristor, model, voltage characteristic, nonlinearity