×

You are using an outdated browser Internet Explorer. It does not support some functions of the site.

Recommend that you install one of the following browsers: Firefox, Opera or Chrome.

Contacts:

+7 961 270-60-01
ivdon3@bk.ru

Multistage programmable RF power attenuator on the basis of low-sized microstrip elements structure creation.

Abstract

Multistage programmable RF power attenuator on the basis of low-sized microstrip elements structure creation.

Dedushkin A.V.

Incoming article date: 30.11.2017

In article the developed circuitry decision with high response characteristics of the multistage programmable attenuator very high frequency of power on the basis of low-sized microstrip elements and heterojunction GaAs HEMT of structures is considered. The main aspects of design and functioning of the diagram are described. Results of simulation mathematical modeling are given in a software package of Microwave Office.

Keywords: MMIC, low-sized microstrip structures, programmable attenuator, heterojunction, HEMT, GaAs, Microwave Office.